schottky barrier diode rb411d ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) low current rectification ? features 1) small mold type. (smd3) 2) low i r 3) high reliability. ? construction silicon epitaxial planer ??? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io ma i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit v f 1 - - 0.50 v i f =500ma v f 2 - - 0.30 v i f =10ma i r 1 --30 av r =10v ct1 - 20 - pf v r =10v , f=1mhz parameter limits reverse voltage (repetitive peak) 40 reverse voltage (dc) 20 average rectified forward current(*1) 500 forward current surge peak (60hz / 1cyc)(*1) 3 junction temperature 125 storage temperature ? 40 to ? 125 (*1) rating of per diode parameter capacitance between terminals conditions reverse current forward voltage smd3 1.0min. 0.8min. 2.4 0.95 1.9 rohm : smd3 jeita : sc-59 week code jedec :s0t-346 0.4 0.1 0.06 2.90.2 2.80.2 1.90.2 1.6 0.2 0.1 0.95 0.95 0.1 0.05 `?? ? 00.1 0.15 1.10.2 0.01 0.80.1 (2) (1) (3) 0.30.6 each lead has same dimension 3.20.1 4.00.1 4.00.1 2.00.05 1.50.1 0 3.50.05 1.750.1 8.00.2 1.350.1 3.20.1 1.05min 3.20.1 0.30.1 5.50.2 00.5 1/3 2011.04 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb411d 0 5 10 15 20 25 30 ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs 0 5 10 15 0.1 1 10 100 1000 t ifsm forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map forward voltage:vf(mv) vf dispersion map reverse recovery time:trr(ns) 0.1 1 10 100 1000 0 100 200 300 400 500 1 10 100 0 102030 f=1mhz ave:405.6mv :3.0258mv 15 16 17 18 19 20 21 22 23 24 25 ave:18.35pf ta=25 f=1mhz vr=0v n=10pcs 0 5 10 15 20 ave:5.70a 8.3ms ifsm 1cyc ave:6.20ns 0 5 10 110100 8.3ms ifsm 1cyc 8.3ms 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time mounted on epoxy board 0 2 4 6 8 10 12 14 16 18 20 ta=25 vr=10v n=30pcs ave:4.67ua 380 390 400 410 420 430 ave:402.4mv ta=25 if=500ma n=30pcs 200 210 220 230 240 250 ta=25 if=10ma n=30pcs ave:218.0mv ta=-25 ta=125 ta=75 ta=25 0.1 1 10 100 1000 10000 0 102030 ta=-25 ta=125 ta=25 ta=75 2/3 2011.04 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb411d forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.05 0.1 0.15 0.2 0 102030 0 0.5 1 1.5 0 25 50 75 100 125 t tj=125 d=t/t t vr io vr=10v 0a 0v 0 0.5 1 1.5 0 25 50 75 100 125 dc d=1/2 sin(?180) sin(?180) dc d=1/2 sin(?180) dc d=1/2 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=10v 0a 0v 3/3 2011.04 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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